Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device

ABSTRACT

A light-emitting layer is provided on a substrate. A p-type semiconductor layer is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer. The upper electrode includes an Au thin film coming into contact with the p-type semiconductor layer and an n-type transparent conductor film formed thereon. The n-type transparent conductor film is formed by laser ablation.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a semiconductor light-emitting device, and more specifically, it relates to a semiconductor light-emitting device so improved that a large quantity of light is extractable. The present invention also relates to a method of manufacturing a transparent conductor film, and more specifically, it relates to a method of manufacturing a transparent conductor film improved to be smooth at a lower temperature and have low resistance and high transmittance so that the cost can be reduced. The present invention further relates to a method of manufacturing a compound semiconductor light-emitting device employing such a method.

2. Description of the Prior Art

FIGS. 9A and 9B illustrate the structure of a conventional light-emitting device and the light-emitting mechanism thereof. Referring to FIGS. 9A and 9B, a light-emitting diode (LED) is an electrical/optical conversion type semiconductor light emitting device utilizing minority carrier injection in a p-n junction part formed by p- and n-type semiconductor crystals adjacent to each other and subsequent recombination radiation.

The device itself is made of a semiconductor crystal material of about 0.3 mm square, and the basic structure thereof is similar to that of an Si rectifying device, as shown in FIG. 9A.

When applying positive and negative forward voltages to the p-type crystal and the n-type crystal respectively, electrons and holes are injected into a p region and an n region respectively, as shown in FIG. 9B. These minority carriers are partially recombined with majority carriers to emit light.

Such an LED has durability, long-livedness, a light weight and a miniature size. The LED, which has been applied only to an indoor indicator lamp, is now applied to the stop lamp of a car, a road sign, a traffic light, a large-area color display or the like following improvement of efficiency and brightness and reduction of the price. Now there is a possibility of applying the LED to the headlamp of a car or a house light substituting for a fluorescent lamp. Further, development of a high-efficiency LED is expected in consideration of energy saving.

Luminous efficiency of an LED includes external quantum efficiency and internal quantum efficiency, and the efficiency of the LED is proportional to the product thereof. The internal quantum efficiency is expressed in the ratio of the number of generated photons to the number of injected electron-hole pairs. In order to improve the internal quantum efficiency, it is necessary to obtain a high-quality crystal containing a small number of defects or impurities, in order to prevent recombination of the electron-hole pairs.

The external quantum efficiency is expressed in the ratio of the number of photons radiated outward to the number of the injected electron-hole pairs. Light generated from an active layer is absorbed by the active layer itself, a substrate or an electrode, and hence can be only partially extracted into air. Further, the refractive index of the semiconductor is by far higher than that of the outside and hence most part of the light is totally reflected by the boundary between the semiconductor and the outside and returned into the semiconductor. Most of LEDs now on the market are sealed with epoxy resin having a refractive index of 1.5, in order to increase the critical angle of total reflection for extracting a larger quantity of light, in addition to the purposes of protection and anti-oxidation of the LEDs.

FIG. 10 is a conceptual diagram showing the structure of a conventional LED. An active layer 23 is formed on an n-type semiconductor layer 22 having an n electrode 21 on the back surface. A p-type semiconductor layer 24 is formed on the active layer 23. A p electrode 25 is formed on the p-type semiconductor layer 24. Recombination radiation occurs at the maximum immediately under an electrode in which a current flows at the maximum. However, a general electrode blocks light, and hence it follows that light emitted immediately under the electrode is hardly extracted outward. In this case, it is important to spread the current to a region other than the electrode. Therefore, a current diffusion layer is provided or a thin gold electrode transmitting light is provided on the overall surface.

FIG. 11 is a sectional view of an LED having a current diffusion electrode 26 provided on a p-type semiconductor layer 24. The current diffusion electrode 26 is formed by an Au thin film of about 20 nm in thickness, in order to obtain sufficient current spreading.

However, the transmittance of the Au thin film 26 having this thickness is only 37% for light of 500 nm in wavelength. Thus, most part of the light is absorbed, to result in inferior luminous efficiency.

Problems of a transparent conductor film applied to a conventional compound semiconductor light-emitting device are now described. The transparent conductor film applied to the conventional compound semiconductor light-emitting device is generally prepared from ITO (In₂O₃—5 wt. % SnO₂). Sputtering is mainly employed for forming a film of ITO having transmittance of at least 80% and resistivity of about 2×10⁻⁴ Ωcm at a substrate temperature of 300° C. with excellent reproducibility. In consideration of application to organic electroluminescence (EL) or a light-emitting diode (LED), a transparent conductor film formable at a lower temperature is demanded.

Japanese Patent Laying-Open No. 6-318406 (1994) proposes a technique of manufacturing a film of In₂O₃—10 wt. % ZnO capable of implementing high transmittance and low resistivity at the room temperature. According to this technique, a film of 140 nm in thickness formed by sputtering under the room temperature implements resistivity of 3×10⁻⁴ Ωcm and transmittance of 86% (at 550 nm).

Further, study is made on formation of a transparent conductor film by vapor deposition or ion plating.

The transmittance and conductivity of a transparent conductor film remarkably depend on the amount of oxygen. In the conventional vapor deposition, however, the film forming pressure is disadvantageously limited due to running of a vapor deposition source. In the sputtering, the pressure and the gas for forming a film are limited such that the pressure range is limited for utilizing plasma and argon is required for forming the plasma, and hence the amount of oxygen cannot be precisely controlled.

SUMMARY OF THE INVENTION

The present invention has been proposed in order to solve the aforementioned problems, and an object thereof is to provide a semiconductor light-emitting device improved to be capable of increasing luminous efficiency.

Another object of the present invention is to provide a method of manufacturing a transparent conductor film improved to be capable of precisely controlling the amount of oxygen with no limitation of the film forming pressure and the film forming gas.

Still another object of the present invention is to provide a method of manufacturing a transparent conductor film improved to be capable of improving transmittance and reducing the cost.

A further object of the present invention is to provide a method of manufacturing a compound semiconductor light-emitting device including a step of forming a transparent conductor film improved to be capable of improving transmittance and reducing the cost.

A semiconductor light-emitting device according to a first aspect of the present invention comprises a substrate provided with an n-type lower electrode on the back surface. A light-emitting layer is provided on the aforementioned substrate. A p-type semiconductor layer is provided on the aforementioned light-emitting layer. An upper electrode is provided on the aforementioned p-type semiconductor layer. The aforementioned upper electrode has a multilayer structure consisting of at least two heterogeneous layers.

According to this aspect, the upper electrode is formed by the multilayer structure consisting of at least two heterogeneous layers, whereby an upper electrode forming no junction with the p-type semiconductor layer and having high transmittance can be formed by properly selecting the heterogeneous layers. Thus, a semiconductor light-emitting diode having high luminous efficiency can be obtained.

According to a second aspect of the present invention, the aforementioned upper electrode includes an Au thin film coming into contact with the aforementioned p-type semiconductor layer and an n-type transparent conductor film formed thereon.

The transparent conductor film, generally prepared from an n-type semiconductor, inevitably forms a junction when the same is directly formed on the p-type semiconductor layer. In order to avoid this, an extremely thin Au film is formed on the p-type semiconductor layer, and the transparent conductor film is thereafter stacked thereon. When the thickness of the Au thin film is reduced, the transmittance is not remarkably reduced. The transparent conductor film having high transmittance can be formed in a relatively large thickness. Consequently, a current effectively spreads over the electrode through the transparent conductor film.

According to a third aspect of the present invention, the thickness of the aforementioned Au thin film is 1 nm to 3 nm. The thickness of the Au film is so sufficiently small that the transmittance is not remarkably reduced.

According to a fourth aspect of the present invention, the aforementioned transparent conductor film is made of In₂O₃—10 wt. % ZnO. The transmittance is increased when preparing the transparent conductor film from such a material.

According to a fifth aspect of the present invention, the aforementioned upper electrode has a multilayer structure including an upper layer and a lower layer. The surface of the aforementioned lower layer is flattened. The surface of the aforementioned upper layer is irregularized.

According to this aspect, light, which is unextractable due to total reflection when the surface is smooth, can be effectively extracted outward by irregularly controlling the surface shape of the transparent conductor film. Consequently, optical output can be improved.

According to a sixth aspect of the present invention, the aforementioned substrate includes a ZnSe single-crystalline substrate. The aforementioned p-type semiconductor layer includes a ZnSe semiconductor layer, a ZnTe semiconductor layer or a BeTe semiconductor layer.

According to a seventh aspect of the present invention, the aforementioned transparent conductor film of In₂O₃—10 wt. % ZnO is formed by laser ablation.

In a method of manufacturing a transparent conductor film according to an eighth aspect of the present invention, a substrate is first placed in a vacuum chamber. A target serving as the material for a transparent conductor film is centered in the aforementioned vacuum chamber. Oxygen is introduced into the aforementioned vacuum chamber. The aforementioned target is irradiated with a laser beam, for depositing atoms or molecular ions emitted by ablation on the aforementioned substrate and crystal-growing the atoms or molecular ions while oxidizing the same.

This method, referred to as laser ablation, is employed for forming a transparent conductor film in the present invention. In the laser ablation, an excimer laser beam serving as an excitation source is guided from outside a film forming apparatus, not to limit the film forming pressure and the film forming gas. Further, the laser ablation involves no influence by reverse sputtering caused by negative ions, dissimilarly to sputtering. According to the laser ablation, the amount of oxygen can be readily controlled and a film having a composition close to that of the target can be obtained due to the aforementioned characteristics. Further, it is possible to obtain a film having superior surface smoothness as compared with that formed by sputtering.

According to a ninth aspect of the present invention, In₂O₃—10 wt. % ZnO is employed for the aforementioned target.

A method of manufacturing a transparent conductor film according to a tenth aspect of the present invention is carried out at a film forming temperature in the range of the room temperature (RI) to 300° C.

A method of manufacturing a transparent conductor film according to an eleventh aspect of the present invention is carried out at a film forming pressure of 0.3 to 3×10⁻³ Torr.

In a method of manufacturing a compound semiconductor light-emitting device according to a twelfth aspect of the present invention, a compound semiconductor light-emitting device substrate immediately before formation of a transparent electrode is first prepared. The aforementioned compound semiconductor light-emitting device substrate is placed in a vacuum chamber. A target serving as the material for a transparent conductor film is centered in the aforementioned vacuum chamber. Oxygen is introduced into the aforementioned vacuum chamber. The aforementioned target is irradiated with a laser beam, for crystal-growing the aforementioned transparent electrode while depositing atoms or molecular ions emitted by ablation on the aforementioned substrate and oxidizing the same.

According to this aspect, the transparent electrode is formed on the compound semiconductor light-emitting device substrate by laser ablation, whereby a compound semiconductor light-emitting device having low resistance and improved transmittance is obtained.

According to a thirteenth aspect of the present invention, In₂O₃—10 wt. % ZnO is employed as the aforementioned target.

A method of manufacturing a compound semiconductor light-emitting device according to a fourteenth aspect of the present invention is carried out at a film forming temperature in the range of the room temperature (RT) to 300° C.

A method of manufacturing a compound semiconductor light-emitting device according to a fifteenth aspect of the present invention is carried out at a film forming pressure of 0.3 to 3×10⁻³ Torr.

The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B, 1C and 1D illustrate the structure of a semiconductor light-emitting device according to a first embodiment of the present invention and certain comparative features thereof;

FIG. 2 is a sectional view of a specific example of the semiconductor light-emitting device according to the first embodiment;

FIG. 3 is a conceptual diagram for illustrating improvement of optical output in a semiconductor light-emitting diode according to a second embodiment of the present invention;

FIG. 4 is a conceptual diagram of a laser ablation film forming apparatus;

FIG. 5 illustrates the relation between resistivity of an IDIXO film having a thickness of 120 nm and oxygen pressure;

FIGS. 6A, 6B and 6C illustrate the oxygen pressure dependency of transmittance of the IDIXO film having a thickness of 120 nm, by showing the transmittance characteristic at three different pressures;

FIGS. 7A, 7B and 7C illustrate the dependency of transmittance of IDIXO (120 nm)/Au with respect to the film thickness of the Au film by showing the transmittance characteristic at three different Au film thicknesses.

FIG. 8 is a sectional view of a compound semiconductor light-emitting device obtained according to the present invention;

FIGS. 9A and 9B are sectional views of a conventional light-emitting device;

FIG. 10 is a sectional view showing the structure of a conventional LED; and

FIG. 11 is a sectional view of a conventional LED having a current diffusion electrode.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Embodiment

In a first embodiment of the present invention, a transparent conductor film having low resistance and high transmittance is employed in place of a conventional Au film. Referring to FIG. 1A, the transparent conductor film is applied as a p-type electrode in the first embodiment of the present invention in particular.

Referring to comparative FIG. 1C, a transparent conductor film 30 generally consists of an n-type semiconductor, and inevitably forms a junction when directly formed on a p-type semiconductor layer 24. Referring to comparative FIG. 1B, transmittance as well as luminous efficiency are reduced when a relatively thick Au film 26 is formed on a p-type semiconductor layer 24.

Referring to FIG. 1D, an extremely thin Au thin film 10 a is formed on a p-type semiconductor layer 24, and a transparent conductor film 10 b is thereafter stacked thereon according to the present invention. The Au thin film 10 a has a sufficiently small thickness of 1 to 3 nm, so that the transmittance is not remarkably reduced. The transparent conductor film 10 b having high transmittance can be formed with a relatively large thickness. Consequently, a current effectively spreads over an electrode through the transparent conductor film 10 b.

FIG. 2 is a sectional view of a ZnSe compound semiconductor light-emitting device to which the present invention is applied. An n-type ZnSe buffer layer 2 of 1 μm in thickness, an n-type ZnMgSSe clad layer 3 of 1 μm in thickness, a ZnSe/ZnCdSe multiple quantum well active layer 4, a p-type ZnMgSSe clad layer 5 of 1 μm in thickness, a p-type ZnSe layer 6 of 0.2 μm in thickness and a p-type contact layer 7 consisting of a multilayer superlattice structure of ZnTe and ZnSe are successively provided on a conductive ZnSe single-crystalline substrate 1 having an n-type electrode 12 on the back surface. A p-type ZnTe layer 8 of 60 nm in thickness is provided on the uppermost surface. An upper electrode 10 having a multilayer structure of an Au thin film 10 a of 1 to 3 nm in thickness and a transparent conductor film 10 b formed thereon is formed on such an epi-structure.

Second Embodiment

A second embodiment of the present invention relates to a technique of extracting light, which is unextractable due to total reflection, by (e.g., irregularly) controlling the surface shape of a transparent conductor film. Thus, optical output can be improved FIG. 3 illustrates the concept of this embodiment.

The following equation holds according to the Snell's law: n ₁ sin θ₁ =n ₂ sin θ₂

Assuming that n₁=3.5 (semiconductor) and n₂=1 (air), an angle θ₁ equalizing an angle θ₂ with 90° is 16.6° (critical angle). In this case, therefore, light is only partially extractable outward.

The critical angle can be increased by preparing the surface of the transparent conductor film in the form of a lens or a saw. Thus, light unextractable due to total reflection can be extracted outward and optical output can be improved.

According to the present invention, as hereinabove described, the transmittance of an electrode is increased and optical output is improved when a p-type electrode is formed by a transparent conductor film and an Au film. Further, the life is increased under constant output due to the improvement of the optical output. The surface shape of the transparent conductor film can be controlled due to the high transmittance thereof. Consequently, the optical output can be improved. In addition, the thickness of the transparent conductor film can be increased due to the high transmittance, and the surface shape thereof can be readily controlled.

-   -   The present invention is now more specifically described.     -   The following Examples were directed to LEDs of ZnSe, and         In₂O₃—10 wt. % ZnO was employed as the material for transparent         conductor films.

EXAMPLE 1

In each sample, an LED having an active layer of ZnCdSe was formed on an n-type ZnSe(100) substrate prepared by CVT (chemical vapor transport). A p-type electrode was set in a p-type ZnSe/ZnTe superlattice structure. An Au film of 3 nm in thickness was formed thereon by vacuum deposition, and a film of In₂O₃/10 wt. % ZnO (IDIXO) was thereafter formed by laser ablation under the following conditions:

Film Forming Temperature: room temperature (25° C.)

Film Forming Pressure: 3×10⁻³ TorrO₂

Laser: KrF laser of 248 nm and 2 J/cm²

Table 1 shows the relation between electrode structures, voltages and optical output values (in energization at 20 mA).

TABLE 1 Electrode Structure Voltage Optical Output 20 nm Au 2.88 V 1.31 mW IDIXO(90 nm)/Au(3 nm) 2.84 V 1.91 mW IDIXO(180 nm)/Au(3 nm) 2.79 V 2.19 mW IDIXO(190 nm) 3.39 V 2.21 mW

In the sample having the electrode structure of IDIXO (180 nm)/Au (3 nm), the optical output was increased from 1.31 mW to 2.19 mW, i.e., by 1.67 times, as compared with the conventional sample having the electrode structure of Au (20 nm). The operating voltage remained substantially unchanged. In the sample having the electrode structure of IDIXO (190 nm), the optical output was substantially identical to that of the sample having the electrode structure of IDIXO (180 nm)/Au (3 nm) while the operating voltage was increased. Thus, it is understood that the film of Au (3 nm) suppressed formation of a junction.

In the sample having the electrode structure of IDIXO (90 nm)/Au (3 nm), the optical output was reduced as compared with the sample having the electrode structure of IDIXO (180 nm)/Au (3 nm). This conceivably resulted from reduction of transmittance caused by multiple reflection in the film of IDIXO. As a result of an experiment, it has been proved that an electrode structure of IDIXO (180 nm to 200 nm)/Au (2 nm to 3 nm) brings an excellent result.

The thickness maximizing the transmittance is expressed as (¼+m/2)×λ/n (m=0, 1, 2, 3), and the thickness minimizing the transmittance is expressed as (m/2)×(λ/n), where X represents the emission wavelength and n represents the refractive index of the IDIXO film.

When the emission wavelength of an LED is 480 nm, for example, the actual value of the refractive index n is 2.07. Therefore, the thickness maximizing the transmittance is 58 nm (m=0) or 174 nm (m=1), i.e., substantially identical to the aforementioned thickness of 180 nm. The thickness minimizing the transmittance is 116 nm (m=1).

EXAMPLE 2

After depositing an Au film, a film of In₂O₃/10 wt. % ZnO was continuously formed in two stages as shown in Table 2. The surface of the upper layer was irregularized.

TABLE 2 Film Forming Thick- Film Forming Surface Temperature ness Pressure Shape Lower Layer Room Temperature 180 nm 3 × 10⁻³ Torr smooth Upper Layer Room Temperature 180 nm 3 × 10⁻¹ Torr irregular

In this sample, the operating voltage was 2.80 V, and the optical output was increased to 2.43 mW.

FIG. 4 is a conceptual diagram of a laser ablation apparatus employed for a method of manufacturing a transparent conductor film according to the present invention. A method irradiating a solid surface with a high-density laser pulse, depositing ions or atoms emitted therefrom on a substrate located on an opposite position and forming a thin film is referred to as laser ablation. This method is remarkably suitable for a process of forming a metal oxide derivative thin film. According to laser ablation, not only film formation but also refinement, etching, multi-layering etc. can be performed in the same experimental chamber with a strong laser pulse. In relation to formation of a ferroelectric thin film, laser ablation has the following advantages:

First, a laser beam is introduced from outside a film forming chamber in this method, and hence a thin film can be formed in an arbitrary atmosphere pressure suitable for crystal growth. Further, atoms, molecules and ions are emitted only from a target, and hence a thin film containing no impurities is formed.

Various parameters such as a pressure, a substrate temperature and a film forming rate can be individually selected. As to controllability of the thin film, film formation can be instantaneously controlled by adjusting the number of laser pulses and energy.

In addition, the film can be formed at an extremely high rate, as recently clarified. Thus, laser ablation has a number of excellent points.

In the laser ablation apparatus, a bulk target consisting of a ferroelectric substance for forming a film is centered in a vacuum chamber, oxygen or gas such as ozone or NO₂ having strong oxidizing power is introduced into the vacuum system and the target is irradiated with a pulse laser beam for causing ablation. Atoms, molecules and ions emitted by ablation are deposited on the substrate and oxidized to cause crystal growth. In a third embodiment of the present invention, a transparent conductor film was formed in such a laser ablation apparatus.

Film forming conditions are as follows:

Laser: KrF laser of 248 nm and 2·J/cm²

Target: In₂O₃—10 wt. % ZnO (high-density product by Idemitsu Kosan, hereinafter abbreviated as IDIXO)

Substrate: MgO (for measuring transmittance) and glass (for measuring resistivity)

Film Forming Temperature: in the range of the room temperature (RT) to 300° C., the room temperature was employed as the standard

Film Forming Pressure: 0.3 to 3×10⁻³ TorrO₂, 3×10⁻³ TorrO₂ was employed as the standard

The film forming conditions are described in more detail.

Oxygen Pressure Dependency

Oxygen pressure dependency of the transmittance of the transparent conductor film was first investigated.

In laser ablation, a plume shape varies with the film forming pressure. Under a certain film forming pressure, the composition of a sample varies with the part of the plume on which the sample is located. The inventor has obtained such a result that the optimum target-to-substrate distance is about 60 to 70 mm in development of a superconducting device, and this time the target-to-substrate distance was fixed to 70 mm from observation of the plume, for evaluating the oxygen pressure dependency. The thickness of the IDIXO film was set to about 120 nm.

FIG. 5 shows the relation between resistivity and oxygen pressure. The resistivity remarkably varied with the oxygen pressure, and a characteristic having a dip was obtained at 3×10⁻³ Torr. This agrees with the hitherto report that the resistance of a transparent conductor film has an optimum value depending on the amount of oxygen. It is extremely difficult to obtain the lowest value of 6.5×10⁻⁵ Ωcm by conventional sputtering. Thus, the resistivity is lower by about one figure as compared with sputtering, and hence the necessary thickness can be reduced to 1/10, the transmittance can be increased and a high-quality transparent conductor film can be prepared at a low cost. The surface of the film prepared under these conditions was extremely smooth with roughness of about 0.5 nm. This value is about 1/10 that of a film prepared by sputtering.

FIGS. 6A, 6B and 6C show results of evaluation of the oxygen pressure dependency of transmittance of IDIXO films on substrates of MgO, respectively for three different film forming oxygen pressures. An absorption edge of about 300 nm is recognized. The sample for measuring transmittance was formed by a substrate of MgO having an absorption edge of about 200 nm, and it is understood that absorption of 300 nm results from the IDIXO film. The transmittance of the MgO substrate measured at a wavelength of 500 nm was 84%, and the relation between the film forming oxygen pressure and the transmittance of the IDIXO film (120 nm) can be calculated as shown in Table 3.

TABLE 3 Film Forming Oxygen Pressure IDIXO Transmittance 0.3 Torr 99% 3 × 10⁻² Torr 87% 3 × 10⁻³ Torr 92%

At the film forming pressure of 0.3 Torr, the resistivity is extremely increased although high transmittance is obtained At the film forming pressure of 3×10⁻³ Torr providing the lowest resistivity, transmittance of 92% was obtained. In a light-emitting device, an Au film having a small thickness is generally used as a transparent electrode. The transmittance of an Au film having a thickness of 20 nm is 37 %, and hence optical output exceeding twice that of a general light-emitting device can be obtained by employing an IDIXO film.

Reproducibility

When applying IDIXO to a product, 1) in-plane distribution, 2) reproducibility and the like must be evaluated. A ZnSe substrate, which is about 10 mm square at present, is regarded as non-problematic in consideration of experiments and achievements made by the inventor in relation to plume shapes and superconduction. This time change of resistivity was evaluated on samples of an IDIXO film formed three times under the same conditions. Table 4 shows the results.

TABLE 4 Run No. IDIXO Resistivity 1 3.5 × 10⁻⁵ Ωcm 2 4.5 × 10⁻⁵ Ωcm 3 5.7 × 10⁻⁵ Ωcm

While increase of the resistivity is recognized along the run, values of not more than 10⁻⁵ Ωcm were obtained in all samples. Stability at such low values is regarded as non-problematic in application to a product.

Conceivable factors for such change of the resistivity are 1) change of the target composition and 2) change of the film thickness. The change 1) can be prevented by polishing the surface of the target and the change 2) can be prevented by setting a thickness monitor.

Oxygen Pressure Dependency in Temperature Reduction

When forming an IDIXO film by laser ablation, the resistivity can be reduced by about one figure in best data as compared with the conventional sputtering. This shows such a possibility that the thickness of a transparent conductor film employed in general can be reduced to about 1/10. In vapor deposition or sputtering, an excitation source (heat in vapor deposition or plasma in sputtering) is present in an apparatus to limit film forming conditions. In contrast with this, an excimer laser beam serving as an excitation source is introduced from outside the apparatus in laser ablation, and hence the film forming pressure can be readily changed from a level close to the atmospheric pressure up to a high vacuum, to enable film formation under the optimum oxygen pressure. Also as to the film composition, a film having a composition close to the target composition can be readily obtained in laser ablation. For such reasons, it is conceivable that formation of an IDIXO film having extremely high resistivity can be implemented according to the present invention.

In order to study the relation between the amount of oxygen and the resistivity, an experiment of changing a temperature reduction atmosphere after film formation was performed at about 300° C. The film forming pressure was set at the value of 3×10⁻³ Torr bringing the lowest resistivity by in film formation at the room temperature. Table 5 shows the results.

TABLE 5 Temperature Reduction Condition Resistivity 100 Torr O₂ 5.2 × 10⁻² Ωcm 3 × 10⁻³ Torr (film forming pressure) 2.3 × 10⁻³ Ωcm in vacuo 1.4 × 10⁻³ Ωcm

When the temperature was lowered under 100 Torr, oxygen was supplied to the sample to increase the resistivity. When the temperature was reduced under the film forming pressure or in vacuo, the resistivity remained substantially unchanged, to prove that the introduced oxygen is not extremely changed in this temperature range. Also in consideration of the experiment on oxygen pressure dependency, it is conceivable that the IDIXO film facilitates introduction of oxygen, and is hard to damage.

Evaluation of IDIXO Film Provided with Au Film

A transparent conductor film, which consists of an n-type semiconductor in general, has a possibility of forming a junction when formed as a p electrode of a ZnSe LED. In order to avoid this, an IDIXO/Au structure obtained by forming an Au film before forming an IDIXO film was studied. Table 6 shows results in relation to resistivity.

TABLE 6 Thickness of Au Film Resistivity  3 nm 1.2 × 10⁻⁴ Ωcm 10 nm 6.0 × 10⁻⁵ Ωcm

As compared with a smooth glass substrate, slightly higher resistivity was obtained when the thickness of the Au film was 3 nm, and substantially identical resistivity was obtained when the thickness was 10 nm. When the thickness of the Au film was 3 nm, the resistivity was increased conceivably because no continuous film of IDIXO was grown in an initial stage due to the presence of Au (not contributing to electrical conduction) grown in the form of an island When the thickness of the Au film was 10 nm, Au formed a continuous film to compensate for reduction of electrical conduction of IDIXO.

FIGS. 7A, 7B and 7C show transmittance in IDIXO/Au electrode structures having three different film thicknesses of the Au film, respectively. Reduction of transmittance resulting from the presence of Au is recognized. At a wavelength of 500 nm, the transmittance of the sample of IDIXO (120 nm)/Au (3 nm) is about 80%. The transmittance was reduced as compared with the small thickness of the Au film conceivably because the transmittance of the IDIXO film itself was reduced due to the presence of Au.

Fourth Embodiment

FIG. 8 is a sectional view of a compound semiconductor light-emitting device manufactured with application of the method of manufacturing a transparent conductor film according to the third embodiment of the present invention. Referring to FIG. 8, an n electrode 52 is provided on the back surface of an n-type semiconductor layer 51. An active layer 53 is provided on the n-type semiconductor layer 51. A p-type semiconductor layer 54 is provided on the active layer 53. A contact layer 55 is provided on the p-type semiconductor layer 54. A p electrode 56, which is a transparent electrode, is provided on the contact layer 55. A pad 57 is provided on the p electrode 56. A current is fed to the pad 57 from an external power source (not shown) through a wire 58.

When employing the laser ablation described with reference to the third embodiment as the method of forming the transparent electrode 56 of the compound semiconductor light-emitting device shown in FIG. 8, an electrode having high transmittance, low electrical conductivity and optical output of at least twice that of a conventional Au electrode is obtained. A ZnSe LED preferably has an electrode structure of IDIXO (200 nm)/Au (3 nm), in order to maximize the optical output.

The method of manufacturing a transparent conductor film having the aforementioned structure is not only applied to a method of forming a transparent electrode of a compound semiconductor light-emitting device but also employable in various fields of liquid crystal displays, solar batteries and the like.

Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims. 

1. A semiconductor light-emitting device comprising: a substrate having a back surface provided with an n-type lower electrode; a light-emitting layer provided on said substrate; a p-type semiconductor layer provided on said light-emitting layer; and an upper electrode provided on said p-type semiconductor layer; wherein said upper electrode includes an Au thin film positioned in contact with said p-type semiconductor layer and an n-type transparent semiconductor film formed on said Au thin film; and wherein said Au thin film has a thickness of 1 nm to 3 nm. and said n-type transparent semiconductor film is made of In₂O₃—10 wt. % znO.
 2. The semiconductor light-emitting device according to claim 1, wherein said upper transparent semiconductor film of In₂O₃—10 wt. % znO is formed by laser ablation and has characteristics as result from being formed by laser ablation.
 3. The semiconductor light-emitting device according to claim 1, wherein said thickness of said Au thin film is in a range of 2 nm to 3 nm and said n-type transparent semiconductor film is a layer of said In₂O₃—10 wt. % znO having a thickness of 180 nm to 200 nm.
 4. The semiconductor light-emitting device according to claim 1, wherein said n-type transparent semiconductor film has a multilayer structure including an upper layer and a lower layer, said lower layer having a flattened surface, and said upper layer having an uneven surface.
 5. The semiconductor light-emitting device according to claim 1, wherein said n-type transparent semiconductor film was deposited at room temperature and said devico has characteristics as result from said n-type transparent semiconductor film having been deposited at room temperature.
 6. The semiconductor light-emitting device according to claim 1, wherein said p-type semiconductor layer is a semiconductor layer selected from the group consisting of a ZnSe-based semiconductor layer, a ZnTe-based semiconductor layer and a BeTe-based semiconductor layer.
 7. The semiconductor light-emitting device according to claim 1, wherein said Au thin film is discontinuous so as to cover first areas of said p-type semiconductor layer while leaving second areas of maid p-type semiconductor layer uncovered, and said n-type transparent semiconductor film covers both said Au film and said second areas of said p-type semiconductor layer which are not covered by said Au film.
 8. The semiconductor light-emitting device according to claim 7, wherein said Au thin film comprises separate discontinuous islands of said Au thin film respectively covering said first areas of said p-type semiconductor layer.
 9. The semiconductor light-emitting device according to claim 1, wherein said n-type transparent semiconductor film contains oxygen with such an oxygen content that minimizes an oxygen-content-dependent variable electrical resistance of said n-type transparent semiconductor film for a given thickness thereof.
 10. The semiconductor light-emitting device according to claim 9, wherein said n-type transparent semiconductor film is formed by adjusting the partial pressure of oxygen in a laser ablation film forming method.
 11. The semiconductor light-emitting device according to claim 1, wherein said Au thin film and said n-type transparent semiconductor film are respective solid continuous films, and said upper electrode does not include a grid-shaped electrode.
 12. The semiconductor light-emitting device according to claim 1, wherein said p-type semiconductor layer and said n-type transparent semiconductor film would form a p/n junction at a interface therebetween but for said Au thin film interposed therebetween, and wherein said thickness of said Au thin film is sufficient to prevent the formation of a p/n junction between said p-type semiconductor layer and said n-type transparent semiconductor film. 